Effect of substrate growth temperatures on H diffusion in hydrogenated Si∕Si homoepitaxial structures grown by molecular beam epitaxy
L. Shao, J. K. Lee, Y. Q. Wang, M. Nastasi, P. E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, P. Chen, S. S. LauYear:
2006
Language:
english
DOI:
10.1063/1.2204330
File:
PDF, 380 KB
english, 2006