Fabrication of in-plane-gate transistor structures by focused laser beam-induced Zn doping of modulation-doped GaAs/AlGaAs quantum wells
P. Baumgartner, K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. WeimannYear:
1994
Language:
english
DOI:
10.1063/1.111087
File:
PDF, 663 KB
english, 1994