High quality AlxGa1−xN grown by metalorganic chemical vapor...

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High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor

M. A. Khan, D. T. Olson, J. N. Kuznia
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Year:
1994
Language:
english
DOI:
10.1063/1.113075
File:
PDF, 533 KB
english, 1994
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