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Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
Kikkawa, Jun, Nakamura, Yoshiaki, Fujinoki, Norihito, Ichikawa, MasakazuVolume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4792647
File:
PDF, 2.83 MB
english, 2013