SiO[sub 2]∕Si[sub 3]N[sub 4]∕Al[sub 2]O[sub 3] stacks for...

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SiO[sub 2]∕Si[sub 3]N[sub 4]∕Al[sub 2]O[sub 3] stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

M. Lisiansky, A. Heiman, M. Kovler, A. Fenigstein, Y. Roizin, I. Levin, A. Gladkikh, M. Oksman, R. Edrei, A. Hoffman, Y. Shnieder, T. Claasen
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Year:
2006
Language:
english
DOI:
10.1063/1.2360197
File:
PDF, 580 KB
english, 2006
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