![](/img/cover-not-exists.png)
Electrical properties of ion beam recrystallized and laser beam annealed arsenic-implanted silicon on sapphire
G. Alestig, G. Holmén, J. LinnrosYear:
1987
Language:
english
DOI:
10.1063/1.339812
File:
PDF, 760 KB
english, 1987