Site-controlled formation of InAs/GaAs...

Applied Physics Letters 2012 Vol. 100; Iss. 26

Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

Tatebayashi, J., Ota, Y., Ishida, S., Nishioka, M., Iwamoto, S., Arakawa, Y.
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Volume:
100
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4731208
File:
PDF, 1.10 MB
english, 2012
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