[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Tensile-strained Ge and Ge1−xSnx layers for high-mobility channels in future CMOS Devices
Zaima, Shigeaki, Nakatsuka, Osamu, Shimura, Yosuke, Takeuchi, ShotaroYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667457
File:
PDF, 339 KB
english, 2010