Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
J. M. Glasko, R. G. Elliman, J. Zou, D. J. H. Cockayne, J. D. Fitz GeraldYear:
1998
Language:
english
DOI:
10.1063/1.122018
File:
PDF, 481 KB
english, 1998