Strain and defect microstructure in ion-irradiated GeSi/Si...

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Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

J. M. Glasko, R. G. Elliman, J. Zou, D. J. H. Cockayne, J. D. Fitz Gerald
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Year:
1998
Language:
english
DOI:
10.1063/1.122018
File:
PDF, 481 KB
english, 1998
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