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SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 μm MOSFET fabrication
JeoungChill Shim, Hyuckjae Oh, Hoon Choi, Takeshi Sakaguchi, Hiroyuki Kurino, Mitsumasa KoyanagiVolume:
224
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2003.08.091
File:
PDF, 282 KB
english, 2004