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Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation
Koji Usuda, Tomohisa Mizuno, Tsutomu Tezuka, Naoharu Sugiyama, Yoshihiko Moriyama, Shu Nakaharai, Shin-ichi TakagiVolume:
224
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.apsusc.2003.11.058
File:
PDF, 116 KB
english, 2004