Structural and electronic properties of strained Si/GaAs...

Physical Review B 1993 / 10 Vol. 48; Iss. 16

Structural and electronic properties of strained Si/GaAs heterostructures

Peressi, M., Colombo, L., Resta, R., Baroni, S., Baldereschi, A.
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Volume:
48
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.48.12047
Date:
October, 1993
File:
PDF, 313 KB
english, 1993
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