High quantum efficiency strained InGaAs/AlGaAs quantum-well resonant-cavity inversion channel bipolar field-effect phototransistor
S. Daryanani, G. W. Taylor, P. Cooke, P. Evaldsson, T. VangYear:
1991
Language:
english
DOI:
10.1063/1.105654
File:
PDF, 658 KB
english, 1991