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Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth
Y. Ito, T. Yamauchi, A. Yamamoto, M. Sasase, S. Nishio, K. Yasuda, Y. IshigamiVolume:
238
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.apsusc.2004.05.199
File:
PDF, 410 KB
english, 2004