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Electronic states associated with dislocations in p -type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy
Kveder, V., Sekiguchi, T., Sumino, K.Volume:
51
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.51.16721
Date:
June, 1995
File:
PDF, 377 KB
english, 1995