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[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - A new self-aligned transistor structure for high-speed and low-power bipolar LSI's

Oh-uchi, N., Kayanuma, A., Asano, K., Hayashi, H., Noda, M.
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Year:
1983
Language:
english
DOI:
10.1109/iedm.1983.190439
File:
PDF, 342 KB
english, 1983
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