New PLAD apparatus and fabrication of epitaxial films and...

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

Hachizo Muto, Takeshi Kusumori, Toshiyuki Nakamura, Takashi Asano, Takahiro Hori
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Volume:
252
Year:
2006
Language:
english
Pages:
11
DOI:
10.1016/j.apsusc.2005.07.113
File:
PDF, 707 KB
english, 2006
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