![](/img/cover-not-exists.png)
Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N 2 environment
Deng, Zhen, Jiang, Yang, Zuo, Peng, Fang, Yutao, Ma, Ziguang, Jia, Haiqiang, Zhou, Junming, Chen, HongVolume:
211
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201330490
Date:
May, 2014
File:
PDF, 483 KB
english, 2014