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A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1−xGex channel MOSFETs
J. B. Roldán, F. Gámiz, J. A. López-villanueva, J. E. CarcellerYear:
1996
Language:
english
DOI:
10.1063/1.363493
File:
PDF, 409 KB
english, 1996