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Nitric acid oxidation method to form SiO2/3C–SiC structure at 120 °C
Sung-Soon Im, Sumio Terakawa, Hitoo Iwasa, Hikaru KobayashiVolume:
254
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2007.10.102
File:
PDF, 438 KB
english, 2008