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Characterization of insulated gate Ga0.47In0.53As/Al0.48In0.52As heterojunction field-effect transistors
T. P. Leonard, J. Bregman, M. Pepper, G. J. Davies, E. G. ScottYear:
1991
Language:
english
DOI:
10.1063/1.349017
File:
PDF, 794 KB
english, 1991