Self-limited growth of Si on B atomic-layer formed...

Applied Surface Science 2008 Vol. 254; Iss. 19

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa
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Volume:
254
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.apsusc.2008.02.131
File:
PDF, 409 KB
english, 2008
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