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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Modeling solid source boron diffusion for advanced transistor applications
Packan, P., Thompson, S., Andideh, E., Yu, S., Ghani, T., Giles, M., Sandford, J., Bohr, M.Year:
1998
Language:
english
DOI:
10.1109/iedm.1998.746408
File:
PDF, 351 KB
english, 1998