Secondary ion mass spectrometry of InGaAs/InP (100)...

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Secondary ion mass spectrometry of InGaAs/InP (100) multiple layers grown by chemical beam epitaxy

M. D. Williams, T. H. Chiu, F. G. Storz, S. C. Shunk, J. F. Ferguson
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Year:
1993
Language:
english
DOI:
10.1063/1.109531
File:
PDF, 641 KB
english, 1993
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