Publisher's Note: “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme” [Appl. Phys. Lett. 104, 133510 (2014)]
Kumar, Ashish, Kumar, Mukesh, Kaur, Riajeet, Joshi, Amish G., Vinayak, Seema, Singh, R.Volume:
104
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4878336
Date:
May, 2014
File:
PDF, 294 KB
english, 2014