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Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
S. Saadaoui, M. M. Ben Salem, M. Gassoumi, H. Maaref, C. GaquièreYear:
2012
Language:
english
DOI:
10.1063/1.3702458
File:
PDF, 1.63 MB
english, 2012