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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Properties of InAs- and silicon-based ballistic spin field-effect transistors operated at elevated temperature
Osintsev, Dmitri, Sverdlov, Viktor, Makarov, Alexander, Selberherr, SiegfriedYear:
2011
Language:
english
DOI:
10.1109/isdrs.2011.6135414
File:
PDF, 795 KB
english, 2011