Low-temperature deposition of stoichiometric HfO2 on...

Applied Surface Science 2010 Vol. 257; Iss. 1

Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements

S. Rudenja, A. Minko, D.A. Buchanan
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Volume:
257
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2010.06.012
File:
PDF, 285 KB
english, 2010
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