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Effect of Al mole fraction on structural and electrical properties of AlxGa1−xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
A. SH. Hussein, Z. Hassan, S.M. Thahab, S.S. Ng, H. Abu Hassan, C.W. ChinVolume:
257
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.apsusc.2010.11.189
File:
PDF, 944 KB
english, 2011