Structural and dielectric properties of Ru-based...

Applied Surface Science 2011 Vol. 257; Iss. 17

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

A. Paskaleva, M. Ťapajna, E. Dobročka, K. Hušeková, E. Atanassova, K. Fröhlich
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Volume:
257
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.apsusc.2011.04.062
File:
PDF, 318 KB
english, 2011
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