Transient picosecond Raman studies of high-field electron...

Physical Review B 1995 / 1 Vol. 51; Iss. 3

Transient picosecond Raman studies of high-field electron transport in GaAs-based p - i - n nanostructure semiconductors

Grann, E. D., Sheih, S. J., Tsen, K. T., Sankey, O. F., Günçer, S. E., Ferry, D. K., Salvador, A., Botcharev, A., Morkoc, H.
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Volume:
51
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.51.1631
Date:
January, 1995
File:
PDF, 440 KB
english, 1995
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