[IEEE 2010 IEEE International Electron Devices Meeting...

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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages

Lu, Z., Collaert, N., Aoulaiche, M., De Wachter, B., De Keersgieter, A., Fossum, J. G., Altimime, L., Jurczak, M.
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Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703377
File:
PDF, 635 KB
english, 2010
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