[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages
Lu, Z., Collaert, N., Aoulaiche, M., De Wachter, B., De Keersgieter, A., Fossum, J. G., Altimime, L., Jurczak, M.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703377
File:
PDF, 635 KB
english, 2010