Molecular-dynamics-based model for the formation of arsenic...

Physical Review B 2005 / 8 Vol. 72; Iss. 7

Molecular-dynamics-based model for the formation of arsenic interstitials during low–temperature growth of GaAs

Kunsági-Máté, Sándor, Schür, Carsten, Végh, Eszter, Marek, Tamas, Strunk, Horst P.
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Volume:
72
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.72.075315
Date:
August, 2005
File:
PDF, 163 KB
english, 2005
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