![](/img/cover-not-exists.png)
[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - An 18.5ns 128Mb SOI DRAM with a floating body cell
Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Morikado, M., Minami, Y., Shino, T., Nakajima, H., Inoh, K., Hamamoto, T., Watanabe, S.Year:
2005
Language:
english
DOI:
10.1109/isscc.2005.1494067
File:
PDF, 262 KB
english, 2005