![](/img/cover-not-exists.png)
Thickness-dependent void fraction of rf-sputtered amorphous Ge films by spectroscopic ellipsometry
P. J. Mcmarr, J. R. Blanco, K. Vedam, R. Messier, L. PilioneYear:
1986
Language:
english
DOI:
10.1063/1.97157
File:
PDF, 493 KB
english, 1986