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Influence of the a-SiGe:H thickness on the conduction mechanisms of n-amorphous-SiGe:H∕p-crystalline-Si heterojunction diodes
P. Rosales-quintero, A. Torres-jacome, R. Murphy-arteaga, F. J. De La Hidalga Wade, L. F. Marsal, R. Cabré, J. PallarèsYear:
2005
Language:
english
DOI:
10.1063/1.1866494
File:
PDF, 398 KB
english, 2005