Flux, fluence and implantation temperature dependence of...

Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N + ion irradiation of GaAs

Ahmed, N. A. G., Christodoulides, C. E., Carter, G.
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Volume:
52
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578008210034
Date:
January, 1980
File:
PDF, 827 KB
english, 1980
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