Introduction and recovery of point defects in...

Physical Review B 1995 / 10 Vol. 52; Iss. 15

Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy

Saarinen, K., Seitsonen, A. P., Hautojärvi, P., Corbel, C.
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Volume:
52
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.52.10932
Date:
October, 1995
File:
PDF, 720 KB
english, 1995
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