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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology
Butt, N., Mcstay, K., Cestero, A., Ho, H., Kong, W., Fang, S., Krishnan, R., Khan, B., Tessier, A., Davies, W., Lee, S., Zhang, Y., Johnson, J., Rombawa, S., Takalkar, R., Blauberg, A., Hawkins, K. V.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703434
File:
PDF, 874 KB
english, 2010