Thermal stability of nitrogen incorporated in HfN[sub x]O[sub y] gate dielectrics prepared by reactive sputtering
J. F. Kang, H. Y. Yu, C. Ren, M. Li, D. S. H. Chan, H. Hu, H. F. Lim, W. D. Wang, D. Gui, D. KwongYear:
2004
Language:
english
DOI:
10.1063/1.1651652
File:
PDF, 330 KB
english, 2004