[IEEE 2010 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM 2010) - Pisa, Italy (2010.06.14-2010.06.16)] SPEEDAM 2010 - Comparison of trench gate IGBT and CIGBT devices for 3.3kV high power module applications
Luther-King, N., Narayanan, E. M. Sankara, Coulbeck, Lee, Crane, Allan, Dudley, RobertYear:
2010
Language:
english
DOI:
10.1109/speedam.2010.5542035
File:
PDF, 396 KB
english, 2010