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Effects of the oxygen vacancy concentration in...

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Kim, Moon-Seok, Hwan Hwang, Young, Kim, Sungho, Guo, Zheng, Moon, Dong-Il, Choi, Ji-Min, Seol, Myeong-Lok, Bae, Byeong-Soo, Choi, Yang-Kyu
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Volume:
101
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4770073
File:
PDF, 1.18 MB
english, 2012
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