Relaxed, low threading defect density Si0.7Ge0.3 epitaxial...

Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition

G. P. Watson, E. A. Fitzgerald, Y. Xie, D. Monroe

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Year:

1994

Language:

english

DOI:

10.1063/1.355894

File:

PDF, 1.39 MB

english, 1994

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