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Fully self-consistent calculation of the electronic structure of n -type InAs accumulation layers
Zhang, An-zhen, Slinkman, J., Doezema, R. E.Volume:
44
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.44.10752
Date:
November, 1991
File:
PDF, 305 KB
english, 1991