Precursor defect to the vacancy-dioxygen center in Si

Precursor defect to the vacancy-dioxygen center in Si

Londos, C. A., Sarlis, N., Fytros, L. G., Papastergiou, K.
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Volume:
53
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.53.6900
Date:
March, 1996
File:
PDF, 111 KB
english, 1996
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