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Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiN[sub x]
Z. Jin, W. Prost, S. Neumann, F. TegudeYear:
2004
Language:
english
DOI:
10.1063/1.1757656
File:
PDF, 356 KB
english, 2004