Influence of stress on optical transitions in GaN nanorods...

Journal of Applied Physics 2014 / 11 Vol. 116; Iss. 17

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Zhuang, Y. D., Bruckbauer, J., Shields, P. A., Edwards, P. R., Martin, R. W., Allsopp, D. W. E.
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4898685
Date:
November, 2014
File:
PDF, 1.63 MB
english, 2014
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