Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique
Kita, Takashi, Wada, OsamuVolume:
74
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.74.035213
Date:
July, 2006
File:
PDF, 291 KB
english, 2006