![](/img/cover-not-exists.png)
[IEEE 2011 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2011.02.20-2011.02.24)] 2011 IEEE International Solid-State Circuits Conference - A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology
Lee, Hyun-Woo, Kim, Ki-Han, Choi, Young-Kyoung, Shon, Ju-Hwan, Park, Nak-Kyu, Kim, Kwan-Weon, Kim, Chulwoo, Choi, Young-Jung, Chung, Byong-TaeYear:
2011
Language:
english
DOI:
10.1109/isscc.2011.5746416
File:
PDF, 853 KB
english, 2011