Mobility enhancement of modulation-doped materials by...

Physical Review B 1987 / 8 Vol. 36; Iss. 5

Mobility enhancement of modulation-doped materials by low-temperature optical annealing of spacer-layer defect charge state

Higgins, R. J., Martin, K. P., Syphers, D. A., Van Vechten, J. A., Palmateer, S. C.
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Volume:
36
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.36.2707
Date:
August, 1987
File:
PDF, 325 KB
english, 1987
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